power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:10/05/16 331 MG12600WB-BR2MM 1200 v 600 a igbt module igbt power module features r ohs applications ? industrial and servo drives ? solar inverters ? high-power converters ? ups ? welding ? rohs compliant absolute maximum ratings (t c = 25 c, unless otherwise specifed) symbol parameters test conditions values unit igbt v ces collector emitter voltage t j = 25 c 1200 v v ges gate emitter voltage 20 v i c dc collector current t c = 25 c 750 a t c = 80 c 600 a i cm repetitive peak collector current t p = 1 ms 1200 a p tot power dissipation per igbt 2500 w diode v rrm repetitive reverse voltage t j = 25 c 1200 v i f(av) average forward current t c = 25 c 600 a i frm repetitive peak forward current t p = 1ms 1200 a i 2 t t j = 125 c, t = 10 ms, v r = 0 v 45 ka 2 s module characteristics (t c = 25 c, unless otherwise specifed) symbol parameters test conditions values unit t j max max. junction temperature 175 c t j op operating temperature -40~150 c t stg storage temperature -40~125 c v isol isolation breakdown voltage ac, 50 hz(r.m.s), t = 1 minute 3000 v torque to heatsink recommended (m5) 2.5~5 nm lolerminal recommended (m6) 3~5 nm weight 350 g MG12600WB-BR2MM 1 ? trench-gate feld stop igbt technology ? low saturation voltage and positive temperature coeffcient ? fast switching and short tail current ? free wheeling diodes with fast and soft reverse recovery ? temperature sense included ? t j max = 175 c agency agency file number e71639 agency approvals
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:10/05/16 332 MG12600WB-BR2MM 1200 v 600 a igbt module igbt power module symbol parameters test conditions min typ max unit igbt v ge(th) gate emitter threshold voltage v ce = v ge , i c = 24 ma 5.0 5.4 6.4 v v ce(sat) collector emitter saturation voltage chip i c = 600 a, v ge = 15 v, t j = 25 c 1. 7 2.15 v i c = 600 a, v ge = 15 v, t j = 125 c 1. 9 terminal i c = 600 a, v ge = 15 v, t j = 25 c 2.0 2.5 v i c = 600 a, v ge = 15 v, t j = 125 c 2.4 i ces collector leakage current v ce = 1200 v, v ge = 0 v, t j = 25 c 100 a v ce = 1200 v, v ge = 0 v, t j = 125 c 1 ma i ges gate leakage current v ce = 0 v, v ge = 15 v, t j = 125 c -400 400 na r gint integrated gate resistor 0.5 q g gate charge v ce = 600 v, i c = 600 a , v ge = 15 v 3.4 c c ies input capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz 60.5 nf c res reverse transfer capacitance 1. 8 nf t d(on) turn-on delay time v cc = 60 0 v i c = 600 a r g = 5 v ge = 15 v inductive load t j = 25 c 250 ns t j = 125 c 280 ns t r rise time t j = 25 c 220 ns t j = 125 c 240 ns t d(off) turn-off delay time t j = 25 c 1000 ns t j = 125 c 110 0 ns t f fall time t j = 25 c 170 ns t j = 125 c 190 ns e on turn-on energy t j = 25 c 20 mj t j = 125 c 35 mj e off turn-off energy t j = 25 c 105 mj t j = 125 c 120 mj i sc short circuit current t psc 10 s , v ge = 15 v; t j = 125 c , v cc = 600 v 2400 a r thjc junction-to-case thermal resistance (per igbt) 0.06 k/w diode v f forward voltage chip i f = 600 a, v ge = 0 v, t j = 25 c 2.1 2.5 v i f = 600 a, v ge = 0 v, t j = 125 c 2.2 v t rr reverse recovery time i f = 600 a, v r = 600 v di f /dt = -2700 a/s t j = 125 c 330 ns i rrm max. reverse recovery current 305 a q rr reverse recovery charge 96 c e rec reverse recovery energy 42 mj r thjcd junction-to-case thermal resistance (per diode) 0.1 k/w electrical and thermal specifcations (t c = 25 c, unless otherwise specifed) 2 ntc characteristics (t c = 25 c, unless otherwise specifed) symbol parameters test conditions min typ max unit r 25 resistance t c = 25 c 5 k b 25/50 r 2 = r 25 exp [b 25/50 (1/t 2 - 1/((298, 15 k))] 3375 k
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:10/05/16 333 MG12600WB-BR2MM 1200 v 600 a igbt module igbt power module figure 1: typical output characteristics igbt inverter figure 2: typical output characteristics igbt inverter figure 3: typical transfer characteristics igbt inverter figure 4: switching energy vs. gate resistor igbt inverter figure 5: switching energy vs. collector current igbt inverter figure 6: reverse biased safe operating area igbt inverter t j = 125 c 3
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:10/05/16 334 MG12600WB-BR2MM 1200 v 600 a igbt module igbt power module figure 7: collector current vs case temperature igbt -inverter figure 8: forward current vs case temperature diode -inverter figure 9: diode forward characteristics diode -inverter figure 10: switching energy vs gate resistor diode -inverter 4 figure 11: switching energy vs forward current diode-inverter figure 12: transient thermallmpedance of diode and igbt -inverter
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:10/05/16 335 MG12600WB-BR2MM 1200 v 600 a igbt module igbt power module dimensions-package wb 5 circuit diagram r ( ? ) t c ?c ? 10000 0 10000 100 0 100 0 20 40 60 80 100 140 120 160 r figure 13: ntc characteristics the foot pins are in gold / nic ke l coating part numbering system part marking system product type m: power module module type g: igbt circuit type wafer type package type mg1 260 0 wb - b r2 mm voltage rating current rating assembly site 12: 1200 v 600: 600 a 2x(igbt+fwd) lo t number space reser ved f or qr code MG12600WB-BR2MM packing options part number marking weight packing mode m.o. MG12600WB-BR2MM MG12600WB-BR2MM vm1b 60
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